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Applied Physics Letters

Volumn 92, Issue 3, 2008, Pages

Photoluminescence thermal quenching in three-dimensional multilayer SiSiGe nanostructures

(3) Lee, E K a Tsybeskov, L a Kamins, T I b

a NEW JERSEY INSTITUTE OF TECHNOLOGY (United States)

b HEWLETT PACKARD LABORATORIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; ENERGY BARRIERS; PHOTOLUMINESCENCE; SILICON ALLOYS; THREE DIMENSIONAL;

NONRADIATIVE RECOMBINATION; PHOTOLUMINESCENCE INTENSITY; THERMAL QUENCHING;

NANOSTRUCTURES;

EID: 38549154447 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2837184 Document Type: Article

Times cited : (14)

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