Magneto-transport studies of Si/SiGe and Si/SiGeC quantum well structures grown by molecular beam epitaxy at low temperatures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 3, 1998, Pages 1670-1674

  Grutzmacher D ^a   Hartmann, R ^a   Schnappauf, P ^a   Gennser, U ^a   Sigg, H ^a   Bachle D ^a   Brosig, S ^b  

^a PAUL SCHERRER INSTITUTE   (Switzerland)

^b ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038256460     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589849     Document Type: Article

References (11)

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