Excitation-dependent photoluminescence in GeSi Stranski-Krastanov nanostructures

Applied Physics Letters

Volumn 89, Issue 15, 2006, Pages

  Kamenev, B V ^a   Lee, E K ^a   Chang, H Y ^a   Han, H ^a   Grebel, H ^a   Tsybeskov, L ^a   Kamins, T I ^b  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^b HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITATION INTENSITY; SIGE ALLOY CLUSTER;

CHEMICAL VAPOR DEPOSITION; ELECTRON ENERGY LEVELS; GERMANIUM COMPOUNDS; PHOTOLUMINESCENCE; PHOTONS;

NANOSTRUCTURED MATERIALS;

EID: 33750011468     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2361198     Document Type: Article

References (27)

1. G. Abstreiter, P. Schittenhelm, C. Engel, E. Silveira, A. Zrenner, D. Meertens, and W. Jäger, Semicond. Sci. Technol. 11, 1521 (1996).
2. Y. Shiraki, H. Sunamura, N. Usami, and S. Fukatsu, Appl. Surf. Sci. 102, 263 (1996).
3. L. C. Lenchyshyn, M. L. W. Thewalt, J. C. Sturm, P. V. Schwartz, E. J. Prinz, N. L. Rowell, J.-P. Nol, and D. C. Houghton, Appl. Phys. Lett. 60, 3174 (1992).
4. B. V. Kamenev, L. Tsybeskov, J.-M. Baribeau, and D. J. Lockwood, Appl. Phys. Lett. 84, 1293 (2004).
5. B. V. Kamenev, L. Tsybeskov, J.-M. Baribeau, and D. J. Lockwood, Phys. Rev. B 72, 193306 (2005).
6. D. J. Eaglesham and M. Cerullo, Phys. Rev. Lett. 64, 1943 (1990).
7. T. I. Kamins and D. P. Basile, J. Electron. Mater. 29, 570 (2000).
8. U. Denker, M. Stoffel, O. G. Schmidt, and H. Sigg, Appl. Phys. Lett. 82, 454 (2003).
9. O. G. Schmidt, C. Lange, and K. Eberl, Appl. Phys. Lett. 75, 1905 (1999).
10. V. Yam, V. Le Thanh, Y. Zheng, P. Boucaud, and D. Bouchier, Phys. Rev. B 63, 033313 (2001).
11. O. G. Schmidt, U. Denker, and K. Eberl, Appl. Phys. Lett. 77, 2509 (2000).
12. S. Fukatsu, Y. Mera, M. Inoue, and K. Maeda, Thin Solid Films 294, 33 (1997).
13. H. Lee and S.-H. Choi, J. Appl. Phys. 85, 1771 (1999).
14. R. S. Williams, G. Medeiros-Ribeiro, T. I. Kamins, and D. A. A. Ohlberg, Annu. Rev. Phys. Chem. 51, 527 (2000).
15. P. Lautenschlager, P. B. Allen, and M. Cardona, Phys. Rev. B 31, 2163 (1985).
16. P. Boucaud, V. Le Thanh, V. Yam, S. Sauvage, N. Meneceur, M. Elkurdi, D. D́barre, and D. Bouchier, Mater. Sci. Eng., B B89, 36 (2002).
17. S. Fukatsu, H. Sunamura, Y. Shiraki, and S. Komiyama, Appl. Phys. Lett. 71, 258 (1997).
18. O. G. Schmidt and K. Eberl, Phys. Rev. B 61, 13721 (2000).
19. X. Z. Liao, J. Zou, D. J. H. Cockayne, J. Wan, Z. M. Jiang, G. Jin, and Kang L. Wang, Phys. Rev. B 65, 153306 (2002).
20. U. Denker, H. Sigg, and O. G. Schmidt, Appl. Surf. Sci. 224, 133 (2004).
21. R. People, IEEE J. Quantum Electron. 22, 1696 (1986).
22. K. Brunner, Rep. Prog. Phys. 65, 27 (2002).
23. C. G. Van de Walle and R. M. Martin, Phys. Rev. B 34, 5621 (1986).
24. S. Fukatsu, J. Cryst. Growth 150, 1025 (1995).
25. D. C. Houghton, G. C. Aers, S.-R. Eric Yang, E. Wang, and N. L. Rowell, Phys. Rev. Lett. 75, 866 (1995).
26. E. S. Kim, N. Usami, H. Sunamura, S. Fukatsu, and Y. Shiraki, J. Cryst. Growth 175-176, 519 (1997).
27. E. S. Kim, N. Usami, and Y. Shiraki, Appl. Phys. Lett. 70, 295 (1997).