Characterization of TFE/norbornene-based fluoropolymer resist for 157-nm lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5376, Issue PART 1, 2004, Pages 159-168

  Hagiwara, Takuya ^a   Furukawa, Takamitsu ^a   Itani, Toshiro ^a,c   Fujii, Kiyoshi ^a   Ishikawa, Takuji ^b   Koh, Meiten ^b   Kodani, Tetsuhiro ^b   Moriya, Tsukasa ^b   Yamashita, Tsuneo ^b   Araki, Takayuki ^b   Toriumi, Minoru ^b   Aoyama, Hirokazu ^b  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b DAIKIN INDUSTRIES LTD   (Japan)

^c RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

157 nm lithography; Chemically amplified resist; Fluoropolymer; Norbornene; Photoacid generator; Protecting group; Quencher; Tetrafluoroethylene

Indexed keywords

COPOLYMERIZATION; ETCHING; FLUORINE CONTAINING POLYMERS; LIGHT ABSORPTION; ORGANIC ACIDS; SYNTHESIS (CHEMICAL);

157-NM LITHOGRAPHY; CHEMICALLY AMPLIFIED RESISTS; NORBORNENE; PHOTOACID GENERATORS; TETRAFLUOROETHYLENE;

PHOTORESISTS;

EID: 3843151400     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.535098     Document Type: Conference Paper

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