Performances of resists for 157-nm lithography based on monocyclic fluoropolymers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5039 I, Issue , 2003, Pages 580-588

  Ishikawa, Seiichi ^a   Irie, Shigeo ^a   Itani, Toshiro ^a   Kawaguchi, Yasuhide ^b   Yokokoji, Osamu ^b   Kodama, Shun Ichi ^b  

^a SLETI   (Japan)

^b ASAHI GLASS CO LTD   (Japan)

Author keywords

157 nm lithography; Blocking group; Chemically amplified resist; Dry etching resistance; Fluoropolymer; Single layer resist

Indexed keywords

ANTIREFLECTION COATINGS; DRY ETCHING; FLUORINE CONTAINING POLYMERS; LASER APPLICATIONS; MASKS; PERFORMANCE; PHOTOLITHOGRAPHY; RESINS; TRANSPARENCY;

CYCLOHEXYLCYCLOHEXYLOXYMETHYL; DRY ETCHING RESISTANCE; LASER MICROSTEPPER; MONOCYCLIC FLUOROPOLYMERS; ORGANIC BOTTOM ANTIREFLECTIVE COATING;

PHOTORESISTS;

EID: 0141499906     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485051     Document Type: Conference Paper

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