Hard mask process using chemically amplified 157-nm resists

Journal of Photopolymer Science and Technology

Volumn 15, Issue 4, 2002, Pages 699-706

  Furukawa, Takamitsu ^a   Miyoshi, Seiro ^a   Watanabe, Hiroyuki ^a   Irie, Sigeo ^a   Itani, Toshiro ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

157 nm lithography; Fluoropolymer; Gate and contact hole fabrication; Hard mask

Indexed keywords

FLUORINE; POLYMER;

ARTICLE; LITHOGRAPHY; REFRACTION INDEX; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR; SURFACE PROPERTY; TECHNOLOGY; THICKNESS; ULTRAVIOLET RADIATION;

EID: 0036356072     PISSN: 09149244     EISSN: None     Source Type: Journal    
DOI: 10.2494/photopolymer.15.699     Document Type: Article

References (16)