Development and characterization of new 157-nm photoresists based on advanced fluorinated polymers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5039 I, Issue , 2003, Pages 103-112

  Yamazaki, Tamio ^a   Furukawa, Takamitsu ^a   Itani, Toshiro ^a   Ishikawa, Takuji ^b   Koh, Meiten ^b   Araki, Takayuki ^b   Toriumi, Minoru ^b   Kodani, Tetsuhiro ^b   Aoyama, Hirokazu ^b   Yamashita, Tsuneo ^b  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b DAIKIN INDUSTRIES LTD   (Japan)

Author keywords

157 nm lithography; Aqueous base solubility; Fluoropolymer; Polymerization initiator; SAC CI method; Single layer resist

Indexed keywords

COPOLYMERIZATION; DISSOLUTION; FLUORINE CONTAINING POLYMERS; INITIATORS (CHEMICAL); SOLUBILITY; SWELLING; SYNTHESIS (CHEMICAL); TRANSPARENCY;

AQUEOUS BASE SOLUBILITY; POLYMERIZATION INITIATORS; POLYNORBORNENE; SINGLE-LAYER RESIST; TETRAFLUOROETHYLENE; TETRAMETHYLAMMONIUM HYDROXIDE;

PHOTORESISTS;

EID: 0141834789     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485046     Document Type: Conference Paper

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