Adsorption state of hydrogen sulfide on the GaAs (001)-(4×2) surface

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 3, 1997, Pages 1163-1167

  Chung, Chan Hwa ^a   Yi, Sang I ^a   Henry Weinberg, W ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION STATE; ATOMIC HYDROGEN; GAAS(001); HIGH RESOLUTION ELECTRON ENERGY LOSS SPECTROSCOPY; POST-EXPOSURE; POSTHYDROGENATION; REPEATED CYCLE; SULFUR PASSIVATION; THERMAL-ANNEALING;

ADSORPTION; AUGER ELECTRON SPECTROSCOPY; DISSOCIATION; ENERGY DISSIPATION; GALLIUM ALLOYS; GALLIUM ARSENIDE; HYDROGEN; HYDROGEN SULFIDE; PASSIVATION; SEMICONDUCTING GALLIUM; SULFUR; TEMPERATURE PROGRAMMED DESORPTION;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 0000105054     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580448     Document Type: Article

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