Phosphorous passivation of In 0.53 Ga 0.47 As using MOVPE and characterization of Au-Ga 2 O 3 (Gd 2 O 3 )-In 0.53 Ga 0.47 As MIS capacitor

Applied Surface Science

Volumn 245, Issue 1-4, 2005, Pages 196-201

  Pal, S ^a   Shivaprasad, S M ^b   Aparna, Y ^b   Chakraborty, B R ^b  

^a RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY   (India)

^b NATIONAL PHYSICAL LABORATORY   (India)

Author keywords

C V measurement; In 0.53 Ga 0.47 As; Interface state density; Surface passivation; XPS

Indexed keywords

CAPACITORS; CHARACTERIZATION; CURRENT VOLTAGE CHARACTERISTICS; GADOLINIUM COMPOUNDS; GOLD; PASSIVATION; PHOSPHORUS;

C-V MEASUREMENT; IN0.53GA0.47AS; INTERFACE STATE DENSITY; SURFACE PASSIVATION;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 17044393968     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.10.009     Document Type: Article

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