Interband Transitions in InGaN Quantum Wells

Nitride Semiconductor Devices: Principles and Simulation

Volumn , Issue , 2007, Pages 145-167

  Hader, Jörg ^a,b   Moloney, Jerome V ^a,b   Thränhardt, Angela ^c   Koch, Stephan W ^c  

^a NONLINEAR CONTROL STRATEGIES INC   (United States)

^b UNIVERSITY OF ARIZONA   (United States)

^c PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

Auger Recombination; Interband transitions in InGaN quantum wells; Internal field effects; Material properties; Nitride semiconductor devices; Spontaneous emission

Indexed keywords

EID: 38149117406     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1002/9783527610723.ch7     Document Type: Chapter

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