Microscopic theory of gain and spontaneous emission in GaInNAs laser material

Solid-State Electronics

Volumn 47, Issue 3, 2003, Pages 513-521

  Hader, J ^a   Koch, S W ^b   Moloney, J V ^a  

^a UNIVERSITY OF ARIZONA   (United States)

^b PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

Absorption; Carrier capture times; Gain; GaInNAs; Photo luminescence; Quantum well lasers

Indexed keywords

PHOTOLUMINESCENCE; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM COMPOUNDS; SPONTANEOUS EMISSION;

MICROSCOPIC MODEL;

QUANTUM WELL LASERS;

EID: 0037346822     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00405-7     Document Type: Conference Paper

References (26)

1. Chow W.W., Kira M., Koch S.W. Microscopic theory of optical nonlinearities and spontaneous emission in group-III nitride quantum wells. Phys. Rev. B. 60:1999;1947-1952.
2. Vurgaftman I., Lam Y., Singh J. Carrier thermalization in sub-three-dimensional electronic systems: fundamental limits on modulation bandwidth in semiconductor lasers. Phys. Rev. B. 50:1994;14309-14326.
3. Grupen M., Hess K. Simulation of carrier transport and nonlinearities in quantum-well laser diodes. IEEE J. Quantum Electron. 34:1998;120-140.
4. Hofmann M., Wagner A., Ellmers C., Schlichenmeier C., Schäfer S., Höhnsdorf F.et al. Gain spectra of (GaIn)(NAs) laser diodes for the 1.3. μ m-wavelength regime Appl. Phys. Lett. 78:2001;3009-3011.
5. Chow W.W., Koch S.W. Semiconductor-laser fundamentals. 1999;Springer-Verlag, Berlin.
6. Smowton P.M., Blood P., Chow W.W. Comparison of experimental and theoretical gain-current relations in GaInP quantum well lasers. Appl. Phys. Lett. 76:2000;1522-1524; Ellmers C., Girndt A., Hofmann M., Knorr A., Rühle W.W., Jahnke F.et al. Measurement and calculation of gain spectra for (GaIn)As/(AlGa)As single quantum well lasers. Appl. Phys. Lett. 72:1998;1647-1649.
7. Smowton P.M., Blood P., Chow W.W. Comparison of experimental and theoretical gain-current relations in GaInP quantum well lasers. Appl. Phys. Lett. 76:2000;1522-1524 Ellmers C., Girndt A., Hofmann M., Knorr A., Rühle W.W., Jahnke F.et al. Measurement and calculation of gain spectra for (GaIn)As/(AlGa)As single quantum well lasers. Appl. Phys. Lett. 72:1998;1647-1649.
8. Hader J, Moloney JV, Koch SW. Carrier capture kinetics in semiconductor quantum-well laser materials. IEEE J Quantum Electron, unpublished.
9. Hader J., Zakharian A.R., Moloney J.V., Nelson T.R., Siskaninetz W.J., Ehret J.E.et al. Quantitative prediction of semiconductor laser characteristics based on low intensity photo luminescence measurements. Photonics Technol Lett. 14:2002;762-764.
10. Ellmers C., Höhnsdorf F., Koch J., Agert C., Leu S., Karaiskaj D.et al. Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3. μ m wavelength regime Appl. Phys. Lett. 74:1999;2271-2273.
11. Wagner A., Ellmers C., Höhnsdorf F., Koch J., Agert C., Leu S.et al. (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser with ultrabroad temperature operation range. Appl. Phys. Lett. 76:2000;271-272.
12. Schneider H.C., Fischer A.J., Chow W.W., Klem J.F. Temperature dependence of laser threshold in an InGaAsN vertical-cavity surface-emitting laser. Appl. Phys. Lett. 78:2001;3391-3393.
13. Fischer M., Reinhardt M., Forchel A. GaInNAs/GaAs laser diodes operating at 1.52. μ m Electron. Lett. 36:2000;1208-1209.
14. Hader J., Moloney J.V., O'Reilly E.P., Hofmann M.R., Koch S.W. Microscopic modeling of GaInNAs semiconductor lasers. Proc. SPIE. 4283:2001;36-42.
15. Girndt A., Jahnke F., Knorr A., Koch S.W., Chow W.W. Multi-band Bloch equations and gain spectra of highly excited II-VI semiconductor quantum wells. Phys. Status Solidi B. 202:1997;725-739.
16. Chow W.W., Girndt A., Koch S.W. Calculation of quantum well laser gain spectra. Opt. Express. 2:1998;119-124.
17. Chow W.W., Koch S.W., Sargent M. III semiconductor-laser physics. 1994;Springer-Verlag, Berlin.
18. Kuhn T. Density matrix theory of coherent ultrafast dynamics. Schöll E. Theory of transport properties of semiconductor nanostructures. 1997;Chapman & Hall, London.
19. Sotirelis P., Hess K. Electron capture in GaAs quantum wells. Phys. Rev. B. 49:1994;7543-7547.
20. Chuang S.-L., Schmittrink S., Miller D.A.B., Chemla D.S. Excitonic greens-function approach to optical absorption in a quantum-well with an applied electric field. Phys. Rev. B. 43:1991;1500-1509.
21. Hader J., Moloney J.V., Koch S.W. Microscopic theory of gain, and refractive index in semiconductor laser materials: influence of conduction band nonparabolicity and Coulomb-induced intersubband coupling absorption. IEEE J. Quantum Electron. 35:1999;1878-1886.
22. Hader J., Koch S.W., Moloney J.V., O'Reilly E.P. Influence of the valence-band offset on gain and absorption in GaNAs/GaAs quantum well lasers. Appl. Phys. Lett. 76:2000;3685-3687.
23. Chuang S.-L. Efficient band-structure calculations of strained quantum-wells. Phys. Rev. B. 43:1991;9649-9661.
24. 1-x /GaAs quantum well structures Phys. Status Solidi B. 223:2001;163-169 Stolz W. 1st workshop on (GaIn)(NAs)-growth, characterisation and optoelectronic devices, Marburg, Germany. 2000.
25. 1-x /GaAs quantum well structures Phys. Status Solidi B. 223:2001;163-169 Stolz W. 1st workshop on (GaIn)(NAs)-growth, characterisation and optoelectronic devices, Marburg, Germany. 2000.
26. Hofmann M.R., Gerhardt N., Wagner A.M., Ellmers C., Höhnsdorf F., Koch J.et al. Emission dynamics and optical gain of 1.3. μ m (GaIn)(NAs)/GaAs lasers IEEE J. Quantum Electron. 38:2002;213-221.