Microscopic evaluation of spontaneous emission- and Auger-processes in semiconductor lasers

IEEE Journal of Quantum Electronics

Volumn 41, Issue 10, 2005, Pages 1217-1226

  Hader, Jörg ^a   Moloney, Jerome V ^a   Koch, Stephan W ^b  

^a UNIVERSITY OF ARIZONA   (United States)

^b PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

Auger recombination; Gain; GaInNAs; InGaAsP; Modeling; Quantum well lasers; Spontaneous emission

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; ELECTRON SCATTERING; MICROSCOPIC EXAMINATION; QUANTUM ELECTRONICS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SPONTANEOUS EMISSION;

AUGER RECOMBINATION; AUGER-PROCESSES; BORN-MARKOV APPROXIMATION; GALLIUM INDIUM NITROGEN ARSENIDE; INDIUM GALLIUM ARSENIC PHOSPHIDE; MICROSCOPIC EVALUATION;

SEMICONDUCTOR LASERS;

EID: 26844529293     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2005.854127     Document Type: Article

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