Microscopic Modeling of Gain and Luminescence in Semiconductor

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 9, Issue 3, 2003, Pages 688-697

  Hader, Jörg ^a   Moloney, Jerome V ^a   Koch, Stephan W ^b   Chow, Weng W ^c  

^a UNIVERSITY OF ARIZONA   (United States)

^b PHILIPPS UNIVERSITY MARBURG   (Germany)

^c SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Absorption; Gain; Gain measurement; Modeling; Photo luminescence (PL); Quantum well lasers

Indexed keywords

ABSORPTION SPECTROSCOPY; CARRIER CONCENTRATION; COMPOSITION; ELECTRIC FIELD EFFECTS; ELECTRON SCATTERING; GAIN MEASUREMENT; HETEROJUNCTIONS; LIGHT PROPAGATION; PHOTOLUMINESCENCE; REFRACTIVE INDEX; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES; THERMAL EFFECTS;

ELECTRON-PHONON SCATTERING; SPECTRAL BROADENING;

QUANTUM WELL LASERS;

EID: 0344092123     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2003.818342     Document Type: Conference Paper

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