Quantitative prediction of semiconductor laser characteristics based on low intensity photoluminescence measurements

IEEE Photonics Technology Letters

Volumn 14, Issue 6, 2002, Pages 762-764

  Hader, J ^a   Zakharian, A R ^a   Moloney, J V ^a   Nelson, T R ^b   Siskaninetz, W J ^b   Ehret, J E ^b   Hantke, K ^c   Hofmann, M ^d   Koch, S W ^c  

^a UNIVERSITY OF ARIZONA   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c PHILIPPS UNIVERSITY MARBURG   (Germany)

^d RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

Gain; Photo luminescence; Semiconductor lasers

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC FIELDS; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; LIGHT ABSORPTION; NUMERICAL METHODS; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS;

BARRIER POTENTIAL; LOW INTENSITY PHOTOLUMINESCENCE MEASUREMENTS;

SEMICONDUCTOR LASERS;

EID: 0036610962     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2002.1003085     Document Type: Article

References (8)

1. Microscopic theory of nonlinearities and spontaneous emission lifetime in group-III nitride quantum wells
2. Comparison of experimental and theoretical gain-current relations in GaInP quantum well lasers
3. Clamping of the linewidth enhancement factor in narrow quantum-well semiconductor lasers
4. Comparison of contact designs for improved stability of broad area semiconductor lasers
5. Model of the field-effect quantum-well laser with free-carrier screening
6. Microscopic theory of gain absorption, and refractive index in semiconductor laser materials - Influence of conduction-band nonparabolicity and Coulomb-induced intersubband coupling
7. Gain spectra in GaAs double-heterostructure injection lasers