SPICE model of AlGaN/GaN HEMTs and simulation of VCO and power amplifier

International Journal of High Speed Electronics and Systems

Volumn 14, Issue 3, 2004, Pages 853-859

  Islam, Syed S ^a   Anwar, A F M ^b  

^a Rochester Institute of Technology   (United States)

^b UNIVERSITY OF CONNECTICUT   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; GALLIUM NITRIDE; MATHEMATICAL MODELS; POWER AMPLIFIERS;

ANALOG CIRCUIT DESIGN; HIGH SPEED ELECTRONICS; RING VOLTAGE;

ALUMINUM COMPOUNDS;

EID: 24144480579     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156404002946     Document Type: Conference Paper

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