A modified transferred-electron high-field mobility model for GaN devices simulation

Solid-State Electronics

Volumn 49, Issue 10, 2005, Pages 1678-1682

  Turin, Valentin O ^a  

^a University of California Riverside   (United States)

Author keywords

Electron high field mobility; Gallium nitride; Semiconductor device simulation

Indexed keywords

COMPUTER SIMULATION; CONCENTRATION (PROCESS); DOPING (ADDITIVES); ELECTRIC FIELDS; GALLIUM NITRIDE; TEMPERATURE DISTRIBUTION; VELOCITY MEASUREMENT;

ELECTRON HIGH-FIELD MOBILITY MODELS; SEMICONDUCTOR DEVICE SIMULATION; VELOCITY DEPENDENCE;

ELECTRON MOBILITY;

EID: 27744604903     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.09.002     Document Type: Article

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