UV-O3 treatment effects on structural changes of low-k thin films

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2188-2191

  Heo, Jaeyeong ^a   Eom, Dail ^a   Kim, Hyeong Joon ^a  

^a Seoul National University   (South Korea)

Author keywords

Diffusion barrier; Low k; Ru; Surface modification; UV O3

Indexed keywords

DIELECTRIC FILMS; FILM THICKNESS; NUCLEATION; PERMITTIVITY; SURFACE TREATMENT; ULTRAVIOLET RADIATION;

LOW-K FILM; OPTIMIZED TREATMENT; REACTIVE OZONE;

THIN FILMS;

EID: 34248645436     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.057     Document Type: Article

References (9)

1. Maex K., Baklanov M.R., Shamiryan D., Iacopi F., Brongersma S.H., and Yanovitskaya Z.S. J. Appl. Phys. 93 (2003) 8793-8841
2. Leskela M., and Ritala M. Thin Solid Films 409 (2002) 138-146
3. Rossnagel S.M., Sherman A., and Turner F. J. Vac. Sci. Technol. B 18 (2000) 2016-2020
4. Loke A.L.S., Wetzel J.T., Townsend P.H., Tanabe T., Vrtis R.N., Zussman M.P., Kumar D., Ryu C., and Wong S.S. IEEE TED 46 (1999) 2178-2187
5. Whelan C.M., Le Q.T., Cecchet F., Satta A., Pireaux J.-J., Rudolf P., and Maex K. Electrochem. Solid-State Lett. 7 (2004) F8-F10
6. Le Q.T., Whelan C.M., Struyf H., Vanhaelemeersch S., Azioune A., Louette P., Pireaux J.-J., and Maex K. J. Appl. Phys. 96 (2004) 3807-3810
7. Heo J., and Kim H.J. J. Electrochem. Soc. 153 (2006) F228-F232
8. Eom D., No S.Y., Hwang C.S., and Kim H.J. J. Electrochem. Soc. 153 (2006) C229-C234
9. Kim S.K., Lee S.Y., Lee S.W., Hwang G.W., Hwang C.S., Lee J.W., and Jeong J. J. Electrochem. Soc. 154 (2007) D95-D101