Transient radiation response of single- And multiple-gate FD SOI transistors

IEEE Transactions on Nuclear Science

Volumn 54, Issue 6, 2007, Pages 2355-2362

  Gaillardin, Marc ^a,b   Paillet, Philippe ^a,c   Ferlet Cavrois, Veronique ^a,c   Baggio, Jacques ^a,c   McMorrow, Dale ^a,d   Faynot, Olivier ^e   Jahan, Carine ^e   Tosti, Lucie ^e   Cristoloveanu, Sorin ^a,b  

^a IEEE   (France)

^b MINATEC   (France)

^c CEA DIF   (France)

^d NAVAL RESEARCH LABORATORY   (United States)

^e CEA LETI   (France)

Author keywords

Charge collection mechanisms; Heavy ion; Multiple gate transistors; Pulsed laser; Single event effects; Single event transient; Single event upset; SOI

Indexed keywords

CHARGE COLLECTION MECHANISMS; MULTIPLE GATE TRANSISTORS; SINGLE EVENT EFFECTS; SINGLE EVENT TRANSIENT; SINGLE EVENT UPSET;

COMPUTER SIMULATION; ELECTRODES; HEAVY IONS; PULSED LASER APPLICATIONS; RADIATION HARDENING; SENSITIVITY ANALYSIS; SILICON ON INSULATOR TECHNOLOGY;

TRANSISTORS;

EID: 37249044744     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.910860     Document Type: Conference Paper

References (23)

1. (2007) International Technology Roadmap for Semiconductors. [Online]. Available: http://www.public.itrs.net/
2. G. K. Celler and S. Cristoloveanu, "Frontiers of silicon on insulator," J. Appl. Phys., vol. 93, no. 3, p. 4955, 2003.
3. J. P. Colinge, "Multiple-gate SOI MOSFETs," Solid State Electron., vol. 48, p. 897, 2004.
4. J.-P. Colinge, M. H. Gao, A. Romano-Rodriguez, H. Maes, and C. Claeys, "Silicon on insulator "gate all around" device," in Proc. IEDM Tech. Dig., 1990, p. 595.
5. X. Huang, W.-C. Lee, C. Kuo, D. Hisamoto, L. Chang, J. Kedzierski, E. H. Anderson, H. Takeuchi, Y.-K. Choi, K. Asano, V. Subramanian, T.-J. King, J. Bokor, and C. Hu, "Sub-50 nm P-channel FinFET," IEEE Trans. Electron Dev., vol. 48, no. 5, p. 880, May 2001.
6. C. Jahan, O. Faynot, M. Casse, R. Ritzenthaler, L. Brevard, L. Tosti, X. Garros, C. Vizioz, F. Allain, A.-M. Papon, H. Dansas, F. Martin, M. Vinet, B. Guillaumot, A. Toffoli, B. Giffard, and S. Deleonibus, " OFETs transistors with TiN metal gate and HfO2 down to 10 nm," in Proc. Symp. VLSI Tech., 2005, p. 112.
7. M. Vinet, T. Poiroux, J. Widiez, J. Lolivier, B. Previtali, C. Vizioz, B. Guillaumot, Y. Le Tiec, P. Besson, B. Biasse, F. Allain, M. Cassé, D. Lafond, J. M. Hartmann, Y. Morand. J. Chiaroni, and S. Deleonibus, "Bonded planar double-metal-gate NMOS transistors down to 10 nm," IEEE Electron Device Lett., vol. 26, no. 5, p. 317, 2005.
8. J. R. Schwank, V. Ferlet-Cavrois, M. R. Shaneyfelt, P. Paillet, and P. E. Dodd, "Radiation effects in SOI technologies," IEEE Trans. Nucl. Sci., vol. 50, no. 3, p. 522, Jun. 2003.
9. S. Cristoloveanu and V. Ferlet-Cavrois, "Introduction to SOI MOSFETs: Context, radiation effects, and future trends," Int. J. High Speed Electron. Syst., vol. 14, no. 2, p. 465, 2004.
10. M. Gaillardin, P. Paillet, V. Ferlet-Cavrois, S. Cristoloveanu, O. Faynot, and C. Jahan, "High tolerance to total ionizing dose of Ω-shaped gate field-effect transistors," Appl. Phys. Lett., vol. 88, p. 223511, 2006, no. May.
11. M. Gaillardin, P. Paillet, V. Ferlet-Cavrois, O. Faynot, C. Jahan, and S. Cristoloveanu, "Total ionizing dose effects on triple-gate FETs," IEEE Trans. Nucl. Sci., vol. 53, no. 6, p. 3158. Dec. 2006.
12. O. Faynot, T. Poiroux, F. Andrieu, C. Jahan, S. Barraud, T. Ernst, L. Brevard, and S. Deleonibus, "Advanced SOI technologies: Advantages and drawbacks," in Proc. Int. Workshop Junction Technology, 2006, p. 200.
13. D. McMorrow, J. S. Melinger, S. Buchner, T. Scott, R. D. Brown, and N. F. Haddad, "Application of a pulsed laser for evaluation and optimization of SEU-hard design," IEEE Trans. Nucl. Sci., vol. 47, no. 3, p. 559, Jun. 2000.
14. J. S. Melinger, S. Buchner, D. McMorrow, W. J. Stapor, T. R. Weatherford, and A. B. Campbell, "Critical evaluation of the pulsed laser method for single-event effects testing and fundamental studies," IEEE Trans. Nucl. Sci., vol. 41, no. 6, p. 2574, Dec. 1994.
15. J. S. Melinger, D. McMorrow, A. B. Campbell, S. Buchner, L. H. Tran, A. R. Knudson, and W. R. Curtice, "Pulsed laser induced single event upset and charge collection measurements as a function of optical penetration depth," J. Appl Phys., vol. 84, no. 2, p. 690, 1998.
16. V. Ferlet-Cavrois, P. Paillet, D. McMorrow, A. Torres, M. Gaillardin, J. S. Melinger, A. R. Knudson, A. B. Campbell, J. R. Schwank, G. Vizkelethy, M. R. Shaneyfelt, K. Hirose, O. Faynot, C. Jahan, and L. Tosti, "Direct measurement of transient pulses induced by laser and heavy ion irradiation in deca-nanometer devices," IEEE Trans. Nucl. Sci., vol. 52, no. 6, p. 2104, Dec. 2005.
17. P. E. Dodd, M. R. Shaneyfelt, J. A. Felix, and J. R. Schwank, "Production and propagation of single-event transients in high-speed digital logic ICs," IEEE Tmns. Nucl. Sci., vol. 51, no. 6, p. 3278, Dec. 2004.
18. V. Ferlet-Cavrois, P. Paillet, M. Gaillardin, D. Lambert, J. Baggio, J. R. Schwank, G. Vizkelethy, M. R. Shaneyfelt, K. Hirose, E. W. Blackmore, O. Faynot, C. Jahan, and L. Tosti, "Statistical analysis of the charge collected in SOI and bulk devices under heavy ion and proton irradiation-Implications for digital SETs," IEEE Trans. Nucl. Sci., vol. 53, no. 6, p. 3242, Dec. 2006.
19. R. Ritzenthaler, S. Cristoloveanu, O. Faynot, C. Jahan, A. Kuriyama, L. Brevard, and S. Deleonibus, "Lateral coupling and immunity to substrate effect in ΩFET devices," Solid State Electron., vol. 50, p. 558, 2006.
20. D. Kobayashi, M. Aimi, H. Saito, and K. Hirose, 'Time-domain component analysis of heavy-ion-induced transient currents in fully-depleted SOI MOSFETs," IEEE Trans. Nucl. Sci., vol. 53, no. 6, p. 3372, Dec. 2006.
21. ISE-Svnopsys, ISE TCAD Manual: Dessis TCAD Manual: Dessis Release 10.0, 2004.
22. J. Benedetto, P. H. Eaton, K. Avery, D. G. Mavis, M. Gadlage, T. Turflinger, P. E. Dodd, and G. Vizkelethy, "Heavy ion-induced digital single-event transients in deep submicron processes," IEEE Trans. Nucl. Sci., vol. 51, no. 6, p. 3480, Dec. 2004.
23. D. G. Mavis and P. H. Eaton, "Soft error rate mitigation techniques for modern microcircuits," in Proc. IEEE Int. Reliability Physics Symp., 2002, p. 216.