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Volumn , Issue , 2004, Pages 71-72
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Influence of dry etching on nitride semiconductor Schottky characteristics
a b b b b b b b a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC FIELDS;
ELECTRON DEVICES;
GALLIUM NITRIDE;
THERMAL CONDUCTIVITY;
DEVICE PERFORMANCE;
DRY ETCHING PROCESS;
ETCHING DAMAGES;
HIGH TEMPERATURE ELECTRONIC DEVICES;
NITRIDE SEMICONDUCTORS;
PRODUCTION PROCESS;
SATURATION VELOCITY;
SCHOTTKY CHARACTERISTICS;
DRY ETCHING;
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EID: 37149014937
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/IMFEDK.2004.1566413 Document Type: Conference Paper |
Times cited : (3)
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References (0)
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