Performance enhancement by using the n+-GaN cap layer and gate recess technology on the AlGaN-GaN HEMT fabrication

IEEE Electron Device Letters

Volumn 26, Issue 1, 2005, Pages 5-7

  Wang, Wen Kai ^a   Lin, Po Chen ^a   Lin, Ching Huao ^a   Lin, Cheng Kuo ^a   Chan, Yi Jen ^a   Chen, Guan Ting ^a   Chyi, Jen Inn ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

AlGaN GaN HEMTs; n+ GaN cap layer; Reactive ion etching (RIE) recess etching

Indexed keywords

ELECTRIC CONTACTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRON MOBILITY; ENERGY GAP; GALLIUM NITRIDE; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVES; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

ALUMINUM GALLIUM NITRIDE; CAP LAYER; CONTACT RESISTANCE; GATE RECESS TECHNOLOGY; MICROWAVE POWER PERFORMANCE; RECESS ETCHING;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 12444283799     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.840395     Document Type: Article

References (8)

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