On-wafer monitoring of charge accumulation and sidewall conductivity in high-aspect-ratio contact holes during Si O2 etching process

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 6, 2007, Pages 1808-1813

  Jinnai, Butsurin ^a   Orita, Toshiyuki ^b   Konishi, Mamoru ^b   Hashimoto, Jun ^b   Ichihashi, Yoshinari ^b   Nishitani, Akito ^b   Kadomura, Shingo ^b   Ohtake, Hiroto ^a   Samukawa, Seiji ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; DYNAMIC RANDOM ACCESS STORAGE; FLUOROCARBONS; ION BOMBARDMENT; PLASMA ETCHING;

CHARGE ACCUMULATION; CONTACT HOLES; ON-WAFER MONITORING DEVICE; SIDEWALL CONDUCTIVITY;

SILICA;

EID: 37149000938     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2794050     Document Type: Article

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