Dielectric etching for 0.18 μm technologies

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1604-1608

  Berruyer, P ^a   Vinet, F ^a   Feldis, H ^a,b   Blanc, R ^a,b   Lerme, M ^a   Morand, Y ^a,b   Poiroux, T ^a,c  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (Italy)

^c Matra MHS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANTENNA EFFECTS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; CONTACT OPENING; CONTACT SIZE; DEEP ULTRAVIOLET; DIELECTRIC ETCHING; ETCH PROCESS; ETCH RATES; HIGH DENSITY PLASMAS; HIGH SELECTIVITY; HIGH YIELD; INDUCED DAMAGE; M-TECHNOLOGIES; MAGNETICALLY ENHANCED REACTIVE ION ETCHINGS; NONUNIFORM; TEST STRUCTURE;

CONTACT RESISTANCE; PERMITTIVITY; PHOTORESISTORS; PLASMA SOURCES; SEMICONDUCTOR DEVICE MANUFACTURE; SURFACE TREATMENT;

REACTIVE ION ETCHING;

EID: 0007042240     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581127     Document Type: Article

References (7)

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