Phase of reflection high-energy electron diffraction oscillations during (Ba,Sr)O epitaxy on Si(100): A marker of Sr barrier integrity

Applied Physics Letters

Volumn 87, Issue 26, 2005, Pages 1-3

  Norga, G J ^a,c   Marchiori, C ^a   Guiller, A ^a   Locquet, J P ^a   Rossel, Ch ^a   Siegwart, H ^a   Caimi, D ^a   Fompeyrine, J ^a   Conard, T ^b  

^a IBM RESEARCH ZURICH   (Switzerland)

^b IMEC   (Belgium)

^c POLITECNICO DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CRYSTALLIZATION; EPITAXIAL GROWTH; LIGHT REFLECTION; MOLECULAR BEAM EPITAXY; OSCILLATIONS; STRONTIUM;

CRYSTALLINITY AND MINIMAL DENSITY; INTERFACIAL SI-O BONDS; REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION OSCILLATIONS; SR TERMINATION LAYERS;

ELECTRON DIFFRACTION;

EID: 29744445307     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2158018     Document Type: Article

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