Enhanced carrier lifetime in bulk-grown 4H-SiC substrates

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 31-34

  Jenny, J R ^a   Malta, D P ^a   Tsvetkov, V T ^a   Das, M K ^a   Hobgood, H Mcd ^a   Carter Jr , C H ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

Bulk growth; DLTS; EBIC; Lifetime; MPCD

Indexed keywords

CRYSTAL GROWTH; DIODES; ELECTRON BEAMS; PHOTOCONDUCTIVITY; SUBSTRATES;

BULK GROWTH; ELECTRON BEAM INDUCED CURRENT (EBIC) MEASUREMENTS; ENHANCED CARRIER LIFETIME; MICROWAVE PHOTOCONDUCTIVE DECAY (MPCD);

SILICON CARBIDE;

EID: 36248996256     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.31     Document Type: Conference Paper

References (9)

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