Dependence of electrical properties on interfacial layer of Ta2O5 films

Microelectronic Engineering

Volumn 84, Issue 12, 2007, Pages 2865-2868

  Lee, Jae Woong ^a   Ham, Moon Ho ^a   Maeng, Wan Joo ^b   Kim, Hyungjun ^b   Myoung, Jae Min ^a  

^a Yonsei University   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

High resolution transmission electron microscopy; Interfacial layer; Tantalum oxide; X ray photoelectron spectroscopy

Indexed keywords

ANNEALING; CAPACITANCE; CRYSTALLIZATION; DECOMPOSITION; FILM THICKNESS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; TANTALUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACIAL LAYERS; TANTALUM OXIDE;

THIN FILMS;

EID: 36148970849     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.02.008     Document Type: Article

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