Focused ion beam modification of surfaces for directed self-assembly of InAs/GaAs(001) quantum dots

Nanotechnology

Volumn 18, Issue 45, 2007, Pages

  McKay, Hugh ^a   Rudzinski, Paul ^a   Dehne, Aaron ^a   Millunchick, Joanna Mirecki ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADATOMS; FOCUSED ION BEAMS; INDIUM ARSENIDE; SATURATION (MATERIALS COMPOSITION); SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE;

GROWTH CONDITIONS; QUANTUM DOT FORMATION;

SEMICONDUCTOR QUANTUM DOTS;

ARSENIC DERIVATIVE; GADOLINIUM; INDIUM; ION; QUANTUM DOT;

ARTICLE; DENSITY; PRIORITY JOURNAL; SURFACE PROPERTY;

EID: 36049035677     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/45/455303     Document Type: Article

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