Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy

Applied Physics Letters

Volumn 79, Issue 12, 2001, Pages 1885-1887

  Sun, Y T ^a   Rodriguez Messmer E ^a   Lourdudoss, S ^a   Ahopelto, J ^b   Rennon, S ^c   Reithmaier, J P ^c   Forchel, A ^c  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

^c UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035903406     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1401781     Document Type: Article

References (8)

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5. E. Rodríguez Messmer, Doctoral thesis, Royal Institute of Technology, Stockholm, 2000.
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7. Y. T. Sun, E. Rodríguez Messmer, D. Söderström, D. Jahan, and S. Lourdudoss, J. Cryst. Growth 225, 9 (2001).
8. R. C. Sangster, in Compound Semiconductors, edited by R. K. Willardson and H. L. Goering (Reinholt, New York, 1962), Vol. 1, p. 241.