Study of focused ion beam response of GaAs in the nanoscale regime

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 6, 2002, Pages 2238-2242

  Lugstein, A ^a   Basnar, B ^a   Bertagnolli, E ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ETCHING; ION BEAMS; PRECIPITATION (CHEMICAL); SEMICONDUCTOR DEVICE MANUFACTURE;

FOCUSED ION BEAM TECHNOLOGY; NANOSCALE; SELF FOCUSING EFFECT;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0036883077     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1517261     Document Type: Article

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