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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 450-453

Physical sputtering of III-V-semiconductors with a focused Ga+-beam

(3) Menzel, R a Bachmann, T a Wesch, W a

a FRIEDRICH SCHILLER UNIVERSITY JENA (Germany)

Author keywords

Focused ion beam; III V semiconductors; Sputtering

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPUTATIONAL METHODS; COMPUTER SIMULATION; COMPUTER SOFTWARE; GALLIUM; ION BEAMS; ION BOMBARDMENT; ION IMPLANTATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SPUTTERING;

FOCUSED ION BEAMS (FIB); GALLIUM PHOSPHIDE; INDIUM ARSENIDE; SOFTWARE PACKAGE TRIDYN; SOFTWARE PACKAGE TRIM;

SEMICONDUCTOR MATERIALS;

EID: 0033513727 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(98)00861-1 Document Type: Article

Times cited : (5)

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