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Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 254, Issue 3-4, 1999, Pages 233-238

Existence of direct bandgap transitions in Si/SiO2 superlattices

(2) Tit, Nacir a,b Dharma Wardana, M W C b

a NATIONAL RESEARCH COUNCIL CANADA (Canada)

b UNITED ARAB EMIRATES UNIVERSITY (United Arab Emirates)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; POROUS SILICON; SILICA;

BAND STRUCTURE CALCULATION; BANDGAP TRANSITION; BRILLOUIN ZONES; CRYSTALLINE SUPERLATTICES; RADIATIVE EFFICIENCY; SHORT PERIODS; SI/SIO2 SUPERLATTICES; TIGHT BINDING;

SILICON;

EID: 0042781039 PISSN: 03759601 EISSN: None Source Type: Journal
DOI: 10.1016/S0375-9601(99)00070-5 Document Type: Article

Times cited : (16)

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