Ir/Ag reflector for high-performance GaN-based near UV light emitting diodes

Materials Science and Engineering: B

Volumn 133, Issue 1-3, 2006, Pages 26-29

  Ban, Keun Yong ^a   Hong, Hyun Gi ^a   Noh, Do Young ^a   Sohn, Jung Inn ^b   Kang, Dae Joon ^c   Seong, Tae Yeon ^d  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c Sungkyunkwan University   (South Korea)

^d Korea University   (South Korea)

Author keywords

Ag reflector; GaN; LED; Ohmic contact

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GALLIUM NITRIDE; IRIDIUM; MIRRORS; OHMIC CONTACTS; SILVER; ULTRAVIOLET RADIATION;

AG REFLECTORS; FLIP-CHIP LIGHT EMITTING DIODES (FCLEDS); SPECIFIC CONTACT RESISTANCE;

LIGHT EMITTING DIODES;

EID: 33747850207     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2006.04.045     Document Type: Article

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