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Volumn 20, Issue 9, 2005, Pages 921-924

Use of an indium zinc oxide interlayer for forming Ag-based Ohmic contacts to p-type GaN for UV-light-emitting diodes

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC RESISTANCE; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY;

EID: 23944527303     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/9/006     Document Type: Article
Times cited : (9)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.