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Volumn 20, Issue 9, 2005, Pages 921-924
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Use of an indium zinc oxide interlayer for forming Ag-based Ohmic contacts to p-type GaN for UV-light-emitting diodes
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
ELECTRIC RESISTANCE;
GALLIUM NITRIDE;
LIGHT EMISSION;
LIGHT EMITTING DIODES;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTOR DOPING;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY SPECTROSCOPY;
CONTACT RESISTANCE;
FORWARD VOLTAGE;
OHMIC FORMATION;
RECTIFYING BEHAVIOR;
OHMIC CONTACTS;
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EID: 23944527303
PISSN: 02681242
EISSN: None
Source Type: Journal
DOI: 10.1088/0268-1242/20/9/006 Document Type: Article |
Times cited : (9)
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References (20)
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