Achieve p-type conduction in N-doped and (Al,N)-codoped ZnO thin films by oxidative annealing zinc nitride precursors

Journal of Materials Research

Volumn 22, Issue 10, 2007, Pages 2668-2675

  Liu, Z W ^a,b   Yeo, S W ^a   Ong, C K ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY; FILM THICKNESS; HALL MOBILITY; HOLE CONCENTRATION; MORPHOLOGY; PHOTOLUMINESCENCE; SYNTHESIS (CHEMICAL); THIN FILMS;

FILM STRUCTURE; OXIDATIVE ANNEALING;

ZINC OXIDE;

EID: 35448965195     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2007.0364     Document Type: Article

References (31)

1. T. Minami, H. Sato, H. Nanto, and S. Takata: Group III impurity doped zinc oxide thin films prepared by RF magnetron sputtering. Jpn. J. Appl. Phys. 24, L781 (1985).
2. K. Minegishi, Y. Koiwai, and K. Kikuchi: Growth of p-type zinc oxide films by chemical vapor deposition. Jpn. J. Appl. Phys. 36, L1453 (1997).
3. Z.G. Fei, Z.Z. Ye, L.P. Zhu, J.G. Lu, B.H. Zhao, J.Y. Huang, Z.H. Zhang, W. Lei, and Z.G. Ji: Electrical and optical properties of Al-N co-doped p-type zinc oxide films. J. Cryst. Growth 268, 163 (2004).
4. D.C. Look and B. Claflin: p-Type doping and devices based on ZnO. Phys. Status Solidi B 241, 624 (2004).
5. Y.W. Heo, Y.W. Kwon, Y. Li, S.J. Pearton, and D.P. Norton: p-Type behavior in phosphorus-doped (Zn,Mg)O device structures. Appl. Phys. Lett. 84, 3474 (2004).
6. Y.R. Ryu, S. Zhu, D.C. Look, J.M. Wrobel, H.M. Jeong, and H.W. White: Synthesis of p-type ZnO films. J. Cryst. Growth 216, 330 (2000).
7. J-R. Duclère, R. O'Haire, A. Meaney, K. Lohnston, I. Reid, G. Tobin, J-P. Mosnier, M. Guilloux-Viry, E. McGlynn, and M.O. Henry: Fabrication of p-type doped ZnO thin films using pulsed laser deposition. J. Mater. Sci. Mater. Electron. 16, 421 (2005).
8. C.H. Park, S.B. Zhang, and S-H. Wei: Origin of p-type doping difficulty in ZnO: The impurity perspective. Phys. Rev. B 66, 073202 (2002).
9. D.C. Look, D.C. Reynolds, C.W. Litton, R.L. Jones, D.B. Eason, and G. Cantwell: Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy. Appl. Phys. Lett. 81, 1830 (2002).
10. Y. Cao, L. Miao, S. Tanemura, M. Tanemura, Y. Kuno, and Y. Hayashi: Low resistivity p-ZnO films fabricated by sol-gel spin coating. Appl. Phys. Lett. 88, 251116 (2006).
11. M. Joseph, H. Tabata, H. Saeki, K. Ueda, and T. Kawai: Fabrication of the low-resistive p-type ZnO by codoping method. Physica B (Amsterdam) 302/303, 140 (2001).
12. A.V. Singh, R.M. Mehra, A. Wakahara, and A. Yoshida: p-Type conduction in codoped ZnO thin films. J. Appl. Phys. 93, 396 (2003).
13. 2 thin films. J. Mater. Res. 18, 8 (2003).
14. 2 thin films deposited by DC magnetron sputtering. J. Cryst. Growth 259, 279 (2003).
15. 2. Solid State Commun. 135, 11 (2005).
16. T. Yamamoto and H.K. Yoshida: Solution using a codoping method to unipolarity for the fabrication of p-type ZnO. Jpn. J. Appl. Phys. 38(2), L166 (1999).
17. L.G. Wang and A. Zunger: Cluster-doping approach for wide-gap semiconductors: The case of p-type ZnO. Phys. Rev. Lett. 90, 256401 (2003).
18. J.G. Lu, Z.Z. Ye, F. Zhuge, Y.J. Zeng, B.H. Zhao, and L.P. Zhu: p-Type conduction in N-Al co-doped ZnO thin films. Appl. Phys. Lett. 85, 3134 (2004).
19. G.D. Yuan, Z.Z, Ye, L.P. Zhu, Q. Qian, B.H. Zhao, R.X. Fan, and L. Craig: Perkins, and S.B. Zhang: Control of conduction type in Al- and N-codoped ZnO thin films. Appl. Phys. Lett. 86, 202106 (2005).
20. 2 films. Phys. Rev. B 48, 2781 (1993).
21. M. Futsuhara, K. Yoshioka, and O. Takai: Structural, electrical and optical properties of zinc nitride thin films prepared by reactive rf magnetron sputtering. Thin Solid Films 322, 274 (1998).
22. T.M. Bames, K. Olson, and C. Wolden: On the formation and stability of p-type conductivity in nitrogen-doped zinc oxide. Appl. Phys. Lett. 86, 112112 (2005).
23. Z.G. Ji, C.X. Yang, K. Liu, and Z.Z. Ye: Fabrication and characterization of p-type ZnO films by pyrolysis of zinc-acetate-ammonia solution. J. Cryst. Growth 253, 239 (2003).
24. 2 films. Appl. Phys. Lett. 88, 172103 (2006).
25. G.D. Yuan, Z.Z. Ye, Q. Qian, L.P. Zhu, J.Y. Huang, and B.H. Zhao: p-Type ZnO thin films fabricated by Al-N co-doping method at different substrate temperature. J. Cryst. Growth 273, 451 (2005).
26. A.P. Roth, J.B. Webb, and D.F. Williams: Absorption edge shift in ZnO thin films at high carrier densities. Solid State Commun. 39, 1269 (1981).
27. J.G. Lu, L.P. Zhu, Z.Z. Ye, F. Zhuge, Y.J. Zeng, B.H. Zhao, and D.W. Ma: Dependence of properties of N-Al codoped p-type ZnO thin films on growth temperature. Appl. Surf. Sci. 245, 109 (2005).
28. E.Y.M. Lee, N. Tran, J. Russel, and R.N. Lamp: Nanocrystalline order of zinc oxide thin films grown on optical fibers. J. Appl. Phys. 92, 2996 (2002).
29. P. Fons, H. Tampo, S. Niki, A.V. Kolobov, M. Ohkubo, J. Tominaga, S. Friedrich, R. Carboni, and F. Boscherini: Soft x-ray XANES of N in ZnO:N - Why is doping so difficult? Nucl. Instrum. Methods Phys. Res. Sect., B 246, 75 (2006).
30. Z.W. Liu, C.K. Ong, T. Yu, and Z.X. Shen: Catalyst-free pulsed-laser-deposited ZnO nanorods and their room-temperature photoluminescence properties. Appl. Phys. Lett. 88, 053110 (2006).
31. Y.Z. Yoo, Y. Osaka, T. Fukumura, Z.W. Jin, M. Kawasaki, H. Koimuma, T. Chikyow, P. Ahmet, A. Setoguchi, and S.F. Chichibu: High temperature growth of ZnS films on bare Si and transformation of ZnS to ZnO by thermal oxidation. Appl. Phys. Lett. 78, 616 (2001).