Field emission studies of nanostructured c-axis oriented GaN film on SiOx /Si(100) by pulsed laser deposition

Solid State Communications

Volumn 144, Issue 7-8, 2007, Pages 296-299

  Jejurikar, Suhas M ^a   Koinkar, P M ^a   More, M A ^a   Joag, D S ^a   Adhi, K P ^a   Kukreja, L M ^b  

^a UNIVERSITY OF PUNE   (India)

^b RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY   (India)

Author keywords

A. Semiconductors; A. Thin films; B. Laser processing; C. Field emission

Indexed keywords

CURRENT DENSITY; PULSED LASER DEPOSITION; SEMICONDUCTOR MATERIALS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

LASER PROCESSING; NEEDLE-LIKE STRUCTURES;

GALLIUM NITRIDE;

EID: 35348964084     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2007.09.004     Document Type: Article

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