Field emission properties of boron and nitrogen doped carbon nanotubes

Chemical Physics Letters

Volumn 428, Issue 1-3, 2006, Pages 102-108

  Sharma, R B ^a   Late, D J ^b   Joag, D S ^b   Govindaraj, A ^c   Rao, C N R ^c  

^a INS Shivaji   (India)

^b UNIVERSITY OF PUNE   (India)

^c JAWAHARLAL NEHRU CENTRE FOR ADVANCED SCIENTIFIC RESEARCH   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CURRENT DENSITY; NITROGEN; SILICON; SUBSTRATES; TUNGSTEN;

FIELD EMISSION; TOTAL EMISSION CURRENT;

CARBON NANOTUBES;

EID: 33747800637     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2006.06.089     Document Type: Article

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