Electric field emission from nitride semiconductor grown on Mo substrate

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2416-2419

  Nishida, S ^a   Yamanaka, T ^a   Hasegawa, S ^a   Asahi, H ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CYCLOTRONS; ELECTRON TRANSPORT; FIELD EMISSION MEASUREMENTS; MO SUBSTRATES; NITRIDE SEMICONDUCTORS; OHMIC CHARACTERISTICS; POLYCRYSTALLINE; POLYCRYSTALLINE GAN;

ATOMIC FORCE MICROSCOPY; FIELD EMISSION; GALLIUM NITRIDE;

ELECTRIC FIELDS;

EID: 84875097521     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303441     Document Type: Conference Paper

References (8)

1. C. A. Spindt, I. Brodie, L. Humphrey, and E. R Westerberg, J. Appl. Phys. 47, 5248 (1976).
2. V. M. Bermudez, T. M. Jung, K. Doverspike, and A. E. Wickenden, J. Appl. Phys. 79, 110 (1996).
3. V. M. Bermudez, J. Appl. Phys. 80, 1190 (1996).
4. O. H. Nam, M. D. Michael. D. Bremser, B. L. Ward, R. J. Nemanich, and R. F. Davis, Jpn. J. Appl. Phys. 36, L532 (1997).
5. C. I. Wu and A. Khan, J. Appl. Phys. 86, 3209 (1999).
6. K. Yamada, H. Asahi, H. Tampo, Y. Imanishi, K. Ohnishi, and K. Asami, Appl. Phys. Lett. 78, 2849 (2001).
7. T. Yamanaka, H. Tampo, K. Yamada, K. Ohnishi, M. Hashimoto, and H. Asahi, phys. stat. sol. (c) 0, No. 1, 469 (2002).
8. B. L. Ward, O.-H. Nam, J. D. Hartman, S. L. English, B. L. McCarson, R. Schlesser, Z. Sitar, R. F. Davis, and R. J. Nemanich, J. Appl. Phys. 84, 5238 (1998).