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Thin Solid Films

Volumn 487, Issue 1-2, 2005, Pages 260-267

Polycrystalline GaN for light emitter and field electron emitter applications

(4) Hasegawa, S a Nishida, S a Yamashita, T a Asahi, H a

a OSAKA UNIVERSITY (Japan)

Author keywords

Electron field emission; Photoluminescence; Plasma assisted MBE; Polycrystalline GaN

Indexed keywords

CURRENT DENSITY; ELECTRON CYCLOTRON RESONANCE; ELECTRON EMISSION; FILM GROWTH; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; QUARTZ;

ELECTRON AFFINITY; ELECTRON FIELD EMISSION; PLASMA ASSISTED MOLECULAR BEAM EPITAXY (MBE); POLYCRYSTALLINE GAN;

GALLIUM NITRIDE;

EID: 22944458482 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2005.01.076 Document Type: Conference Paper

Times cited : (28)

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