Low-etch-pit-density GaN substrates by regrowth on free-standing GaN films

Applied Physics Letters

Volumn 80, Issue 20, 2002, Pages 3718-3720

  Tsai, Chiung Chi ^a   Chang, Chen Shiung ^a   Chen, Tsung Yu ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b Advance Eepitaxy Technology   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR LEVELS; ETCH PITS; ETCH-PIT DENSITY; GAN FILM; GAN SUBSTRATE; HYDRIDE VAPOR PHASE EPITAXY; OPTICAL AND ELECTRICAL PROPERTIES; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE; THERMAL QUENCHING;

ELECTRIC PROPERTIES; GALLIUM NITRIDE; SAPPHIRE;

SUBSTRATES;

EID: 79955997828     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1480108     Document Type: Article

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