Physical properties of lanthanum monosulfide thin films grown on (100) silicon substrates

Journal of Applied Physics

Volumn 99, Issue 12, 2006, Pages

  Cahay, M ^a   Garre, K ^a   Wu, X ^b   Poitras, D ^b   Lockwood, D J ^b   Fairchild, S ^c  

^a 705 Engineering Research Center   (United States)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CONCENTRATION; LANTHANUM MONOSULFIDE;

LANTHANUM; MORPHOLOGY; PULSED LASER DEPOSITION; SILICON; X RAY DIFFRACTION;

THIN FILMS;

EID: 33745725633     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2201998     Document Type: Article

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