Cathodoluminescence study on the tilt and twist boundaries in bonded silicon wafers

Materials Science and Engineering: B

Volumn 91-92, Issue , 2002, Pages 244-247

  Sekiguchi, T ^a   Ito, S ^b   Kanai, A ^c  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c Naoetsu Electronics Co Ltd   (Japan)

Author keywords

Cathodoluminescence; D line; Dislocation; Grain boundaries; Hydrogen; Silicon

Indexed keywords

CATHODOLUMINESCENCE; GRAIN BOUNDARIES; SPECTRUM ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

EDGE DISLOCATIONS;

SILICON WAFERS;

EID: 0037197494     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)01020-0     Document Type: Conference Paper

References (14)