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Journal of Crystal Growth

Volumn 210, Issue 1, 2000, Pages 90-93

Electron-beam-induced-current study of artificial twist boundaries in bonded Si wafers

(5) Ikeda, K a Sekiguchi, T a Ito, S a Takebe, M b Suezawa, M a

a TOHOKU UNIVERSITY (Japan)

b SHIMADZU CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); ELECTRIC CURRENTS; ELECTRON IRRADIATION; RADIATION EFFECTS; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON BEAM INDUCED CURRENT (EBIC); SCREW DISLOCATIONS;

SILICON WAFERS;

EID: 0033907139 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(99)00653-3 Document Type: Article

Times cited : (9)

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