Effect of photoacid generator concentration and developer strength on the patterning capabilities of a model EUV photoresist

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6519, Issue PART 2, 2007, Pages

  Choi, Kwang Woo ^a   Prabhu, Vivek M ^b   Lavery, Kristopher A ^b   Lin, Eric K ^b   Wu, Wen Li ^b   Woodward, John T ^b   Leeson, Michael J ^a   Cao, Heidi B ^a   Chandhok, Manish ^a   Thompson, George ^a  

^a INTEL CORPORATION   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Chemically amplified photoresist; EUV; Line width roughness; LWR; PAG; Photoacid generator

Indexed keywords

CHEMICALLY AMPLIFIED PHOTORESIST; LINE WIDTH ROUGHNESS; PHOTOACID GENERATOR;

EXTREME ULTRAVIOLET LITHOGRAPHY; OPTICAL RESOLVING POWER; OPTIMIZATION; PROBLEM SOLVING; SURFACE ROUGHNESS; THIN FILMS;

PHOTORESISTS;

EID: 35148883081     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.712407     Document Type: Conference Paper

References (12)

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