Application of Diluted Developer Solution (DDS) process to 193 nm photolithography process

Proceedings of SPIE-The International Society for Optical Engineering

Volumn 4690 I, Issue , 2002, Pages 557-570

  Tanaka, Keiichi ^a   Iwaki, Hiroyuki ^a   Yamada, Yoshiaki ^a   Kiba, Yukio ^a   Kamei, Shigenori ^a   Goto, Kazuyuki ^a  

^a TOKYO ELECTRON LTD   (Japan)

Author keywords

193 nm Photolithography resist; And Dissolution mechanism; Process margin; Resin; TMAH concentration

Indexed keywords

CONCENTRATION (PROCESS); RESINS; SEMICONDUCTOR DEVICE MANUFACTURE; SOLUTIONS;

DILUTED DEVELOPER SOLUTION (DDS) PROCESS;

PHOTORESISTS;

EID: 0036029019     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.474256     Document Type: Article

References (5)

1. Robert D. Allen, Carl E. Larson, Hoa D. Truong, Phillip J. Brock and Hiroshi Ito, J. Photopolym. Sci. Technol. 13, 595(2000).
2. C.M. Nelson, S.C. Palmateer, A.R. Forte, S. Gcann, S. Deneault, T.M. Lyszczarz, Proc. SPIE 3677, 53(1999).
3. T. Kumada, H. Sumitani and Y. Matsui, J. Photopolym. Sci. Technol. 14, 519(2001).
4. Y. Yoshida, T. Kumada, A. Sasahara, A. Oshida, and H. Adachi, Proc. SPIE. 3333, 562(1998).
5. Qinghuang Lin, Dario L. Goldfarb, Marie Angelopoulos, Suresh R. Sriram, Jeffrey S. Moore, Proc. SPIE. 4345, 78(2001).