Microscopically controlled oxidation of H/Si(1 0 0) by lateral surface electric field studied by emission electron microscopies

Surface Science

Volumn 601, Issue 20 SPEC. ISS., 2007, Pages 4675-4679

  Fukidome, Hirokazu ^a   Tanaka, Kei ^a   Yoshimura, Masamichi ^a   Ueda, Kazuyuki ^a   Guo, Fang Zhun ^b   Kinoshita, Toyohiko ^b   Kobayashi, Keisuke ^b  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

^b NONE   (Japan)

Author keywords

Mirror electron microscopy; Oxidation; Photoemission electron microscopy; Silicon; X ray photoelectron spectroscopy

Indexed keywords

ELECTRIC FIELDS; OXIDATION; SEMICONDUCTOR JUNCTIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

MIRROR ELECTRON MICROSCOPY; PHOTOEMISSION ELECTRON MICROSCOPY;

SILICON;

EID: 35148872653     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2007.05.026     Document Type: Article

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