Variation of contrast of H/pn-Si(100) imaged with different emission electron microscopies

e-Journal of Surface Science and Nanotechnology

Volumn 4, Issue , 2006, Pages 539-543

  Fukidome, Hirokazu ^a   Yoshimura, Masamichi ^a   Ueda, Kazuyuki ^a   Guo, Fang Zhun ^b   Kinoshita, Toyohiko ^b   Kobayashi, Keisuke ^b  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

^b JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

Author keywords

Emission electron microscopy; Mirror electron microscopy; Photoemission electron microscopy; Si

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; ELECTRON MICROSCOPES; MIRRORS; PHOTOEMISSION; SILICON; SYNCHROTRON RADIATION;

BAND BENDING; EMISSION ELECTRON MICROSCOPY; MIRROR ELECTRON MICROSCOPY; PHOTOEMISSION ELECTRON MICROSCOPY (PEEM);

IMAGING TECHNIQUES;

EID: 33745136817     PISSN: 13480391     EISSN: 13480391     Source Type: Journal    
DOI: 10.1380/ejssnt.2006.539     Document Type: Conference Paper

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