Characterization of p-n junctions and surface-states on silicon devices by photoemission electron microscopy

Applied Physics A: Materials Science and Processing

Volumn 64, Issue 5, 1997, Pages 423-430

  Giesen, M ^a,c   Phaneuf, R J ^a,b   Williams, E D ^a   Einstein, T L ^a   Ibach, H ^c  

^a Bldg 142   (United States)

^b LABORATORY FOR PHYSICAL SCIENCES   (United States)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRON MICROSCOPY; ELECTRONIC STRUCTURE; ELECTRONS; ELECTROOPTICAL EFFECTS; FABRICATION; FERMI LEVEL; PHOTOEMISSION; SEMICONDUCTOR JUNCTIONS; SUBSTRATES; SURFACES;

CONTRAST; ELECTRON OPTICAL DEFLECTION; ELECTRON OPTICAL EFFECT; PHOTOEMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING SILICON;

EID: 0031147408     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050500     Document Type: Article

References (15)

1. O.H. Griffith, W. Engel: Ultramicroscopy 36, 154 (1991)
2. G. Rempfer, O.H. Griffith: Ultramicroscopy 27, 273 (1989)
3. G. Ertl: Science 254, 1750 (1991)
4. H.H. Rotermund, W. Engel, S. Jackubith, A. von Oertzen, G. Ertl: Ultramicroscopy 36, 164 (1991)
5. A. von Oertzen, H.H. Rotermund, S. Nettesheim: Chem. Phys. Lett. 199, 131 (1992)
6. C. Wang, M.E. Kordesch: Ultramicroscopy 36, 154 (1991)
7. O.H. Griffith: Appl. Surf. Sci. 26, 265 (1986)
8. F.G. Allen, G.W. Gobeli: Phys. Rev. 127, 150 (1962)
9. A. Fernandez, in preparation (1996)
10. A. Ishizaki, Y. Shiraki: J. Electrochem. Soc. 133, 666 (1986)
11. H. Ibach: Electron Energy Loss Spectroscopy, Springer Series in Optical Sciences 63, Springer, (Berlin 1991)
12. H. Lüth: Surfaces and Interfaces of Solid Materials, Springer, (Berlin Heidelberg 1995), p. 290ff
13. H. Ibach, H.D. Bruchmann, H. Wagner: Appl. Phys. A29, 113 (1982)
14. F.G. Allen, T.M. Buck, J.T. Law: J. App. Phys. 31, 979 (1960)
15. M. Giesen, R.T. Phaneuf, E.D. Williams, preprint (1997)