Temperature-dependent contrasts of lateral p+-n junctions on H/Si(100) imaged with photoemission electron microscopy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 46-49, 2005, Pages

  Fukidome, Hirokazu ^a   Yoshimura, Masamichi ^a   Ueda, Kazuyuki ^a  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

Author keywords

Band bending; Hydrogen termination; p+ n junction; Photoemission electron microscope; Si; Surface photovoltage

Indexed keywords

ELECTRON MICROSCOPES; ELECTRON MICROSCOPY; HYDROGEN; PHOTOEMISSION; SILICON; TEMPERATURE DISTRIBUTION;

BAND BENDING; HYDROGEN-TERMINATION; P+-N JUNCTION; SURFACE PHOTOVOLTAGE;

SEMICONDUCTOR JUNCTIONS;

EID: 31844451459     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L1417     Document Type: Article

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