Trapping phenomena in silicon-based nanocrystalline semiconductors

Solid-State Electronics

Volumn 51, Issue 10 SPEC. ISS, 2007, Pages 1328-1337

  Ciurea, M L ^a   Iancu, V ^b   Mitroi, M R ^b  

^a NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^b UNIVERSITY POLITEHNICA OF BUCHAREST   (Romania)

Author keywords

Nanocrystalline silicon; Traps

Indexed keywords

CHARGE TRAPPING; NANOCRYSTALLINE MATERIALS; POROUS SILICON; SEMICONDUCTOR QUANTUM WELLS;

DISCHARGE CURRENTS; OPTICAL CHARGING SPECTROSCOPY; TRAP PARAMETERS;

SEMICONDUCTOR MATERIALS;

EID: 35048880922     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.07.002     Document Type: Article

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