Trapping levels in (nc-Si/CaF2)n multi-quantum wells

Materials Science and Engineering C

Volumn 15, Issue 1-2, 2001, Pages 45-47

  Ioannou Sougleridis, V ^a   Nassiopoulou, A G ^a   Ciurea, M L ^b   Bassani, F ^c   Arnaud d'Avitaya, F ^c  

^a INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

^b NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^c CRMR2/CNRS Campus de Luminy ^*  (France)

Author keywords

Nanocrystalline silicon; Nc Si CaF2 multi quantum wells; Trapping levels in multilayers

Indexed keywords

ACTIVATION ENERGY; ELECTRIC CURRENTS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

TRAPPING LEVELS;

MATERIALS SCIENCE;

NANOCRYSTAL;

EID: 0034841063     PISSN: 09284931     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0928-4931(01)00215-6     Document Type: Article

References (10)