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Volumn 516, Issue 1, 2004, Pages 109-115

Determination of the effective dominant electron and hole trap in neutron-irradiated silicon detectors

Author keywords

Continuous carrier injection; Effective carrier trapping time; Effective space charge; Silicon detectors

Indexed keywords

CARRIER CONCENTRATION; CATHODE RAY OSCILLOSCOPES; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC SPACE CHARGE; ELECTRON TRAPS; HOLE TRAPS; MATHEMATICAL MODELS; NEUTRON IRRADIATION; PROBABILITY; SILICON;

EID: 1242330463     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2003.08.115     Document Type: Article
Times cited : (9)

References (17)
  • 16
    • 1242338451 scopus 로고    scopus 로고
    • Ph.D. Thesis, Hamburg
    • M. Moll, Ph.D. Thesis, Hamburg, 1999.
    • (1999)
    • Moll, M.1
  • 17
    • 0242523093 scopus 로고    scopus 로고
    • The effect of charge collection recovery in silicon p-n junctions irradiated by different particles
    • in press
    • E. Verbitskaya, et al., The effect of charge collection recovery in silicon p-n junctions irradiated by different particles, Nucl. Instr. and Meth. A, (2003) in press.
    • (2003) Nucl. Instr. and Meth. A
    • Verbitskaya, E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.